Ohmic Contact on Ternary ZnSxSe1-x Epilayers

ISBN-13: 9783639201321 / Angielski / Miękka / 2009 / 140 str.

Tsung-Hsiang Shih

Opis

High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. ITO film formed by thermal evaporated In-Sn alloy first, then annealing in O2 atmosphere. The conductivity and transparency of ITO have been trade-off at acceptable parameter. Because of the highest current in I-V characteristic in the structure of ITO/ZnS0.06Se0.94:N, we optimized the annealing temperature and time at 450C for 60min in O2 atmosphere. Because of the excellent transparency and conductivity in the structure of ITO/Glass, we optimized the annealing temperature and time at 650C for 60min in O2 atmosphere. In this study, ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au- Zn double heterojunction (DH) structure has been prepared after annealing In- Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au- Zn in O2 atmosphere. I-V characteristic of DH junction structure shows a diode electric property.

O autorze

Tsung-Hsiang Shih was born in Yilan, Taiwan, in 1977. He received M.S. and Ph.D degrees from the Department of EE at National Sun Yat-sen University in 2001 and 2006, respectively. He is an IEEE member. He currently worked in AUO and involved in the research on Oxide TFT, OLED, MOS, nanotechnology, compound semiconductor materials and devices.