Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change

ISBN-13: 9781439807453 / Angielski / Twarda / 2011 / 203 str.

Li Hai; Yiran Chen; Shahram Jamshidi

Opis

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing technical barriers. So much so, that other technologies have been proposed as alternatives. This book introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory.

O autorze

Hai Li