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Kategorie szczegółowe BISAC

Noise in Semiconductor Devices: Modeling and Simulation

ISBN-13: 9783540665830 / Angielski / Twarda / 2001 / 213 str.

Fabrizio Bonani; F. Bonani; G. Ghione
Noise in Semiconductor Devices: Modeling and Simulation Bonani, Fabrizio 9783540665830 Springer - książkaWidoczna okładka, to zdjęcie poglądowe, a rzeczywista szata graficzna może różnić się od prezentowanej.

Noise in Semiconductor Devices: Modeling and Simulation

ISBN-13: 9783540665830 / Angielski / Twarda / 2001 / 213 str.

Fabrizio Bonani; F. Bonani; G. Ghione
cena 605,23 zł
(netto: 576,41 VAT:  5%)

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The design and optimization of electronic systems often requires appraisal an of the electrical noise generated by active devices, and, at a technological level, the ability to properly design active elements in order to minimize, when possible, their noise. Examples of critical applications are, of course, receiver front-ends in RF and optoelectronic transmission systems, but also front-end stages in sensors and, in a completely different context, nonlinear circuits such as oscillators, mixers, and frequency multipliers. The rapid de- velopment of silicon RF applications has recently fostered the interest toward low-noise silicon devices for the lower microwave band, such as low-noise MOS transistors; at the same time, the RF and microwave ranges are be- coming increasingly important in fast optical communication systems. Thus, high-frequency noise modeling and simulation of both silicon and compound- semiconductor based bipolar and field-effect transistors can be considered as an important and timely topic. This does not exclude, of course, low- frequency noise, which is relevant also in the RF and microwave ranges when- ever it is up-converted within a nonlinear system, either autonomous (as an oscillator) or non-autonomous (as a mixer or frequency multiplier). The aim of the present book is to provide a thorough introduction to the physics-based numerical modeling of semiconductor devices operating both in small-signal and in large-signal conditions. In the latter instance, only the non-autonomous case was considered, and thus the present treatment does not directly extend to oscillators.

Kategorie:
Technologie
Kategorie BISAC:
Technology & Engineering > Electronics - Semiconductors
Technology & Engineering > Electrical
Science > Optyka
Wydawca:
Springer
Seria wydawnicza:
Springer Series in Advanced Microelectronics,
Język:
Angielski
ISBN-13:
9783540665830
Rok wydania:
2001
Wydanie:
2001
Numer serii:
000239500
Ilość stron:
213
Waga:
1.18 kg
Wymiary:
23.5 x 15.5
Oprawa:
Twarda
Wolumenów:
01
Dodatkowe informacje:
Bibliografia
Wydanie ilustrowane

From the reviews of the first edition:

"This book is devoted to the research and estimation of the electrical noise generated by active semiconductor devices. It provides a thorough introduction to the physics-based numerical modeling of these devices operating both in small-signal and in large-signal conditions. ... this comprehensive treatment of the numerical simulation of noise in semiconductor devices successfully combines a modern physical understanding with rigorous mathematics and numerical methods. This book should be recommended to scientists and engineers of corresponding specialties ... ." (I. A. Parinov, Zentralblatt MATH, Vol. 1044 (19), 2004)

"Bonani and Ghione have written an excellent source book for research engineers and scientists interested in the modelling of noise in semiconductor devices. ... Compact noise models are derived from analytic models and numerical methods are presented to solve for the complex and realistic models. ... There is a useful and reasonably comprehensive bibliography. I strongly recommend this book to specialists in the area." (B. D. Nener, The Physicist, Vol. 39 (2), 2002)

1. Noise in Semiconductor Devices.- 2. Noise Analysis Techniques.- 3. Physics-Based Small-Signal Noise Simulation.- 4. Results and Case Studies.- 5. Noise in Large-Signal Operation.- A. Appendix: Review of Probability Theory and Random Processes.- A.1 Fundamentals of Probability Theory.- A.2 Random Processes.- A.3 Correlation Spectra and Generalized Harmonic Analysis of Stochastic Processes.- A.4 Linear Transformations of Stochastic Processes.- A.5 Cyclostationary Stochastic Processes.- A.6 A Glimpse of Markov Stochastic Processes.- References.

The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. After an overview of the basic physics of fluctuations in semiconductors, noise modelling techniques are introduced for the small-signal case. In particular, a detailed treatment is devoted to Green's function approaches such as the Impedance Field Method. Then, the numerical implementation of such approaches within the framework of multi-dimensional numerical device models is discussed in detail with reference to the customary Finite-Boxes discretization scheme. Finally, the topic of large-signal noise simulation is addressed within the framework of the Harmonic Balance approach, and implementation details are given for the non-autonomous case. The application fields covered range from low-noise, small-signal amplifiers to nonlinear circuits such as RF and microwave frequency multipliers and mixers.



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