Nitride Semiconductor Doped with Transition Metal

ISBN-13: 9783659511189 / Angielski / Miękka / 2018 / 156 str.

Fethallah Dahmane; Abdelkader Tadjer; Bendouma Doumi

Opis

In this work, we present a theoretical study of structural, electronic, magnetic and optical properties for zinc-blende :Ga1-xT MxN,Al1-xT MxN and In1-xT MxN(TM=Cr, Fe, Mn, V) using the full-potential augmented plane wave (FP-APW) method with local spin density approximation (LSDA). We have analysed the dependence of structural parameters values on the composition x in the range of x=0.125,x=0.25, x=0.50,x=0.75, we found existence of deviation from Vegard's law. Our calculations also verify the half-metallic ferromagnetic character of TM doped GaN, AlN and InN. Also, the role of p-d hybridization is analyzed by partial (PDOS) and total density of stat (TDOS).

O autorze

Dahmane, Fethallah
Dr Fethallah DAHMANE is a Professor of Physics in university of Tissemsilt. He Received PhD from Sidi Bel Abbes University in 2014. His main scientific work is focused on the structural, electronic and, magnetic properties of crystalline materials using Density functional theory (DFT) as implemented in WIEN2K packages.