Nanoscale Electronic Devices and Their Applications

ISBN-13: 9780367407070 / Angielski / Twarda / 2020 / 219 str.

Khurshed Ahmad Shah; Farooq Ahmad Khanday

Opis

This book helps to acquire thorough understanding of the basics of solids at nanoscale besides their applications including operation and properties of recent nanoscale devices covering carbon nanotube devices and their applications, doping techniques, construction and operation details of channel Engineered MOSFETs and spin devices.

Spis treści

1. Fundamentals of Nanoscale Electronic Devices1.0 Introduction1.1 Free Electron theory and Quantum theory1.2 Origin of band gap in solids1.3 Tight binding approximation1.4 Low dimensional materials1.5 Quantum confinement in low dimensional materials1.6 Density of states in bulk materials1.7 Density of states in 2D, 1D and 0D materials1.8 Examples of 0D, 1D and 2D materials1.9 Non-Equilibrium green’s Function (NEGF)1.10 Density Function Theory (DFT)1.11 Summary1.12 References 2. Carbon Nanotubes and their Device Applications2.0 Introduction2.1 Physical properties of Carbon nanotubes (CNTs)2.2 Ballistic transport and Quantum conductance in CNTs2.3 CNT two probe devices2.4 CNT Field Effect Transistors (CNT-FETs) 2.5 CNT logic gates2.6 CNT sensors 2.7 CNT photo-detectors and Photoresistors2.8 CNT Interconnects2.9 CNT memories2.10 Summary2.11 References 3. Electronic Transport Properties of Doped Carbon Nanotube Devices3.0 Introduction3.1 Doping methods and techniques3.2 Transport properties of two probe CNT devices3.3 Effects of doping on electronic transport properties of two probe CNT systems 3.4 Negative Differential Resistance (NDR) in CNT-FET and CNT-MOSFET3.5 NDR in chromium doped single walled carbon nanotube devices3.6 Comparative study of conventional and electrical doping in CNT devices3.7 Transport properties of CNT bio-molecule sensors3.8 Summary3.9 References 4. Field Effect Transistors Based on Graphene and Other Popular Two Dimensional Materials4.0 Introduction4.1 Graphene Field Effect Transistors (GFETs)4.2 Molybdenum disulphide Field Effect Transistors (MoS2-FETs)4.3 Molybdenum Selenide Field Effect Transistors (MOSe2 –FETs)4.4 Tungsten disulphide Field Effect Transistors (WS2-FETs)4.5 Silicene Field and Germenene Effect Transistors 4.6 Summary4.7 References 5. Gate and Channel Engineered Nanoscale Electronic Devices5.0. Introduction to Nanoscale devices5.1. Non-Conventional Solutions to Miniaturization Problems5.2. Gate and Channel Engineering Techniques5.3. Multi-gate Multi-material MOSFET5.4. Multi-gate Multi-material Tunnel FET5.5. Summary5.6. References 6. Spin Nanoscale Electronic Devices and their Applications6.0. Introduction to Spintronics 6.1. Spin Devices6.2 Summary 6.3 References 7. Phase Change Devices and their Applications7.0. Introduction 7.1. Phase Change Memory (PCM) 7.2. Memristor 7.3. Resistive Random Access Memory (RRAM) 7.5. Summary7.6. References