Nanometer CMOS

ISBN-13: 9789814241083 / Angielski / Twarda / 2010 / 350 str.

Kowloon) Wong Hei (City University of Hong Kong

Opis

This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Recenzje

"Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book."
—Prof. Michael Shur, Rensselaer Polytechnic Institute, USA

"This book combines the knowledge of three distinguished authors in a unique blend transcending from early history to modern-day nanotechnology; the text will be enjoyable, educational and illuminating for the technical novice and the modern expert."
—Dr. Steven Voldman, ESD Association, USA

Spis treści

The Evolution of Silicon Electronics. MOSFET Theory. Nanoscale MOSFETs. MOSFETs for RF Applications. Overview of Nanometer CMOS Technology. Outlook. Appendices.

O autorze

Juin J Liou, Frank Schwierz, Hei Wong