Mos (Metal Oxide Semiconductor) Physics and Technology

ISBN-13: 9780471430797 / Angielski / Miękka / 2002 / 928 str.

Edward H. Nicollian; John R. Brews

Opis

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Spis treści

Introduction.

Field Effect.

Metal Oxide Silicon Capacitor at Low Frequencies.

Metal Oxide Silicon Capacitor at Intermediate and High Frequencies.

Extraction of Interface Trap Properties from the Conductance.

Interfacial Nonuniformities.

Experimental Evidence for Interface Trap Properties.

Extraction of Interface Trap Properties from the Capacitance.

Measurement of Silicon Properties.

Charges, Barrier Heights, and Flatband Voltage.

Charge Trapping in the Oxide.

Instrumentation for Measuring Capacitor Characteristics.

Oxidation of Silicon––Oxidation Kinetics.

Oxidation of Silicon––Technology.

Control of Oxide Charges.

Models of the Interface.

Appendices.

Subject Index.

Symbol Index.

O autorze

E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.

John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.