Molecular Beam Epitaxy of III-V Compounds: A Comprehensive Bibliography 1958-1983

ISBN-13: 9783540131779 / Angielski / Miękka / 1984 / 222 str.

K. Ploog; K. Graf

Opis

Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin- film growth technique which emerged from the 'Three-temperature method' de- veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc. , play an important role in the application to optoelectronic and high-speed devices. Over the past three years the technology of molecular beam epitaxy has spread rapidly to most major research and development laboratories through- out the world, and an increasing number of highly refined III-V semiconduc- tor structures with exactly tailored electronic properties have been pro- duced and explored for fundamental studies as well as for device appl ica- tion. The comprehensive bibliography on this dramatically expanding topic helps chemists, engineers, materials scientists, and physicists working in semiconductor research and development areas to sort out the important lit- erature of their particular interest. A direct reproduction of the output of a computer printer has been used to enable rapid publication and to keep printing costs low. The work was sponsored by the 'Bundesministerium fUr Forschung und Technologie' of the Federal Republic of Germany. Stuttgart, January 1984 K. Ploog . K. Graf Subject Categories and References Introduction ...Year 1977 ...

Spis treści

Period 1958–1970.- Year 1971.- Year 1972.- Year 1973.- Year 1974.- Year 1975.- Year 1976.- Year 1977.- Year 1978.- Year 1979.- Year 1980.- Year 1981.- Year 1982.- Year 1983.- Author Index.