Molecular Beam Epitaxy: From Research to Mass Production

ISBN-13: 9780128121368 / Angielski / Miękka / 2018 / 788 str.

Mohamed Henini

Spis treści

1. Molecular beam epitaxy of transition metal monopnictides2. Migration Enhanced Epitaxy of Low Dimensional Structures3. MBE growth of Si-Ge materials and heterostructures4. SiGeSn MBE 5. MBE of Dilute Nitride Optoelectronic Devices6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications7. AlGaN nanowires for deep ultraviolet optoelectronics8. plasma-assisted MBE of (Al,Ga)N layers and heterostructures 9. InAsBi and InAsSbBi materials10. Molecular beam epitaxy of GaAsBi and related quaternary alloys11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices12. NIL-based site-control epitaxy13. Droplet epitaxy of nanostructures14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications 16. ZnO Materials and Devices grown by MBE17. Epitaxial Systems Combining Oxides and Semiconductors18. Nanostructures of SiGe and ferromagnetic properties19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices20. Challenges and opportunities in MBE growth of 2D crystals: an overview21. Molecular beam epitaxy of graphene and hexagonal boron nitride22. MBE of Transition Metal Dichalcogenides and heterostructures23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth25. MBE of II-VI Lasers26. THz Quantum Cascade Lasers27. GaSb lasers grown on Silicon substrate for telecom application 28. GaP/Si based photovoltaic devices grown by MBE 29. MBE as a Mass Production Technique30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs31. Mass Production of Sensors Grown by MBE32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future