Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

ISBN-13: 9781107162044 / Angielski / Twarda / 2018 / 252 str.

Farzan Jazaeri; Jean-Michel Sallese

Opis

A detailed introduction to the design, modeling, and operation of junctionless FETs, including advantages and limitations.

Spis treści

1. Introduction; 2. Review on modeling junctionless FETs; 3. The EPFL charge-based model of junctionless field-effect transistors; 4. Model driven design – space of junctionless FETs; 5. Generalization of the charge based model: accounting for inversion layers; 6. Predicted performances of junctionless FETs; 7. Short channel effects in symmetric junctionless double-gate FETs; 8. Modeling AC operation in symmetric double-gate and nanowire JL FETs; 9. Modeling asymmetric operation of double-gate junctionless FETs; 10. Modeling noise behavior in junctionless FETs; 11. Carrier mobility extraction methodology in JL and inversion mode FETs; 12. Revisiting the Junction FET: a junctionless FET with an ∞ gate capacitance; 13. Modeling junctionless FET with interface traps targeting biosensor applications; Appendix A. Design – space of twin gate junctionless vertical slit FETs; Appendix B. Transient off-current in junctionless FETs; Appendix C. Derivatives of mobile charge density with respect to VGS and VDS; Appendix D. Global charge density at drain in depletion mode; Appendix E. Global charge density at drain in accumulation mode; Appendix F. The EPFL Junctionless MODEL ver.1.0.