Materials and Physics for Nonvolatile Memories: Volume 1160

ISBN-13: 9781605111339 / Angielski / Twarda / 2009 / 199 str.

Y. Fujisaki; R. Waser; T. Liu

Opis

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Spis treści

Part I. Advanced Flash I; Part II. Charge Trap Memory I; Part III. Magnetic Resistive RAM; Part IV. Poster Session: Advanced Flash II; Part V. Poster Session: Charge Trap II and MRAM; Part VI. Ferroelectric Memory; Part VII. Resistive Switching RAM I; Part VIII. Resistive Switching RAM II; Part IX. Poster Session: Resistive Switching RAM III; Part X. Poster Session: Phase Change RAM I; Part XI. Phase Change RAM II; Part XII. Phase Change RAM III; Author index; Subject index.