Journey Towards Nanowires

ISBN-13: 9786203411263 / Angielski / Miękka / 144 str.

SUBHA SUBRAMANIAM

Opis

Microelectronics industry has moved towards Nanoscale regime which has achieved low power and high switching speed in electronic circuits. According to International Technology Roadmap for Semiconductors ITRS-2020, today's technology has reached a feature size of sub-10nm and moving towards 5.6nm. In order to sustain down scaling it is not only essential to develop new device architectures, but it may also be required to replace silicon. Intel has developed tri-gate transistor-based devices at 14nm gate length. Multi-Gate FETs and Nanowire transistor structures are found suitable below 14nm technology node. However, Vertical Nanowires developed with III-V compound materials, high- gate oxide materials, and metal gates better performance is explored.

O autorze

SUBRAMANIAM, SUBHA Subha Subramaniam has made a unique contribution in the broad technical developments of Nano Electronics field. In over 20 years of teaching field, she has been a Associate Professor and taught various subjects in Electronics field. Currently she is affiliated to Shah and Anchor Kutchhi Engineering College, Mumbai, INDIA.