Ionizing Radiation Effects in Electronics: From Memories to Imagers

ISBN-13: 9780367655952 / Angielski / Miękka / 2020 / 394 str.

Marta Bagatin; Simone Gerardin

Opis

This book describes the effects of ionizing radiation on modern semiconductor devices. It also discusses hardening-by-design solutions for custom chips. The text covers a range of devices, from memories and microprocessors to mixed-analog components and imagers. It addresses the experimental aspects as well as the simulation of radiation effects

Recenzje

"... timely and useful. The organization of this book is excellent, covering the most popular works in the field of radiation effects. The authors for these topics are famous, qualified, and professional at the relative field. All of them have devoted many years on their specific topics."
—Lili Ding, Northwest Institute of Nuclear Technology, Xi’an, China

Spis treści

Introduction to the Effects of Radiation on Electronic Devices. Monte Carlo Simulation of Radiation Effects. A Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies. Radiation Effects in DRAMs. Radiation Effects in Flash Memories. Microprocessor Radiation Effects. Soft-Error Hardened Latch and Flip-Flop Design. Assuring Robust Triple-Modular Redundancy Protected Circuits in SRAM-Based FPGAs. Single-Event Mitigation Techniques for Analog and Mixed-Signal Circuits. CMOS Monolithic Sensors with Hybrid Pixel-Like, Time-Invariant Front-End Electronics: TID Effects and Bulk Damage Study. Radiation Effects on CMOS Active Pixel Image Sensors. Natural Radiation Effects in CCD Devices. Radiation Effects on Optical Fibers and Fiber-Based Sensors.

O autorze

Marta Bagatin received her Laurea degree (cum laude) in electronic engineering and her Ph.D in information science and technology, both from the University of Padova, Italy. She is currently a postdoctoral researcher in the Department of Information Engineering at the University of Padova. Her research concerns radiation and reliability effects on electronic devices, especially on nonvolatile semiconductor memories. Marta has authored/coauthored two book chapters and more than 90 journal and conference publications. She regularly serves on committees for events such as the Nuclear and Space Radiation Effects Conference and Radiation Effects on Components and Systems, and as a journal reviewer.

Simone Gerardin received his Laurea degree (cum laude) in electronics engineering and his Ph.D in electronics and telecommunications engineering, both from the University of Padova, Italy—where he is currently an assistant professor. His research concerns soft and hard errors induced by ionizing radiation in advanced CMOS technologies, and their interplay with device aging and ESD. Simone has authored/coauthored more than 150 journal papers and conference presentations, three book chapters, and three radiation effects conference tutorials. He is an associate editor for IEEE Transactions on Nuclear Science, a reviewer for several scientific journals, and a Radiation Effects Steering Group member-at-large.