Ion Implantation in Microelectronics: A Comprehensive Bibliography

ISBN-13: 9781468461343 / Angielski / Miękka / 2012 / 266 str.

Agajanian, A. H.

Opis

During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu- facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro- electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA), Electrical and Electronics Abstracts (EEA), Chemical Abstracts (CA), Nuclear Science Abstracts (NSA), and Engineering Index. The volumes and numbers of the abstracts are given to pro- vide access to the abstracts.

Spis treści

I. Bibliographies.- II. Books and Symposia.- III. Review Articles.- IV. Theory.- V. Materials.- 1. General.- 2. Group IV Semiconductors.- A. Silicon.- a. Amorphous.- b. Annealing.- c. Channeling.- d. Concentration Profiles.- e. Electrical and Optical Properties.- f. Lattice Location.- g. Modeling.- h. Polysilicon.- i. Radiation Damage.- j. Structure Analysis.- k. Through SiO2.- l. Others.- B. Others.- 3. Group III-V Semiconductors.- A.Gallium Arsenide.- B. Others.- 4. Group II-VI Semiconductors.- 5. Dielectric Thin Films.- 6. Metals and Alloys.- 7. Others.- VI. Device Applications.- 1. General.- 2. p-n Junctions.- 3. Diodes.- 4. Bipolar Transistors.- 5. Field-Effect Transistors.- A. General.- B. MOS.- C. GaAs.- D. SOS.- E. CMOS.- F. MIS.- G. MESFET.- H. Others.- 6. Resistors.- 7. Detectors.- 8. CCD.- 9. Si-SiO2 Structures.- 10. Solar Cells.- 11. Bubble Devices.- 12. Others.- VII. Equipment.- 1. Accelerator/Implantor Systems.- 2. Ion Source/Extractor.- A. General.- B. Large Area.- C. Negative Ion.- D. Numerical Simulation.- 3. Beam Transport/Focusing/Scanning.- 4. Beam Target Systems/Profiling/Dosimetry.- 5. Micro Ion Beams.- 6. Miscellaneous.- Author Index.