Introduction to Junctionless Double Gate MOSFET

ISBN-13: 9786139462483 / Angielski

Gaurav Dhiman; Rajeev Pourush

Opis

The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.

O autorze

Dhiman, Gaurav
Gaurav Dhiman was born in Pathankot, India, in1981. He received the B.Tech. degree in Electronics and Communicationengineering from the Punjab Technical University, Jalandhar, India, in 2003,and the M.Tech. and Ph.D. degrees in VLSI design from the ModyUniversity of Science and Technology (MUST) Lakshmangarh, Rajasthan,India, in 2011 and 2018.