Ingaas Avalanche Photodiodes for Ranging and Lidar

ISBN-13: 9780081027257 / Angielski / Miękka / 2020 / 275 str.

Andrew S. Huntington

Spis treści

1. Types of avalanche photodiode 2. Avalanche photodiode figures of merit 3. APD photoreceivers for range-finding and lidar 4. Linear-mode InGaAs APD design and manufacture Appendix: Semiconductor physics

O autorze

Dr. Andrew Huntington manages Voxtel's Semiconductor Detector and Device Development Group since 2004 and is responsible for Voxtel's advanced development efforts relating to semiconductor devices, material growth, device modeling, and detector design and development efforts. He invented and patented Voxtel's advanced high-gain, low-excess-noise SCM-APD technologies, and has supported this important device's development through Monte Carlo modeling and experimental extraction of the material's properties. He has also managed the development of Voxtel's array process and APD-based commercial products. The detector projects Dr. Huntington has conducted include Geiger- and linear-mode SOI CMOS and InGaAs-based APDs for the NIR; HgCdTe APDs for the SWIR, MWIR, and LWIR; and silicon-based linear APDs for visible and X ray applications. He has a number of publications detailing this work.
Prior to joining Voxtel, Dr. Huntington performed his doctoral studies in materials at the University of California, Santa Barbara (L. Coldren Group), where his dissertation work included development of low-noise and broad-area InGaAs/InAlAs APDs. Dr. Huntington developed his expertise in the production of APD wafers by molecular beam epitaxy, with particular emphasis on understanding the relationship between growth conditions, material quality, and device performance.