III-Nitride Semiconductors and Their Modern Devices

ISBN-13: 9780199681723 / Angielski / Twarda / 2013 / 672 str.

Bernard Gil

Opis

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters.
All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.

Recenzje

This book, written by a team of worldwide experts in the field, deals with nitride based materials in 16 chapters. It covers growth and material aspects of nitrides, nano-devices, photonics, advanced transistors, slow light production, and terahertz emission. Emphasis is put on directions of aluminum rich nitrides for UV operation and utilization of silicon substrates.

O autorze

Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.