III-Nitride Electronic Devices: Volume 102

ISBN-13: 9780128175446 / Angielski / Twarda / 2019 / 546 str.

Rongming Chu; Keisuke Shinohara

Spis treści

1. Electronic properties of III-nitride materials and basics of III-nitride FETs Peter M. Asbeck 2. Epitaxial growth of III-nitride electronic devices Yu Cao 3. III-Nitride microwave power transistors Jeong-Sun Moon 4. III-Nitride millimeter wave transistors Keisuke Shinohara 5. III-Nitride lateral transistor power switch Sang-Woo Han and Rongming Chu 6. III-Nitride vertical devices Tohru Oka 7. Physics-based III-Nitride device modeling Ujwal Radhakrishna 8. Power electronics applications of III-nitride transistors Yifeng Wu 9. N-polar III-nitride transistors M.H. Wong and U.K. Mishra 10. III-Nitride ultra-wide-bandgap electronic devices Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein and Shahed Reza 11. III-Nitride p-channel transistors Akira Nakajima 12. Emerging materials, processing and device concepts David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal and Brian P. Downey 13. Epitaxial lift-off for III-nitride devices Chris Youtsey, Robert McCarthy and Patrick Fay

O autorze

Rongming Chu is an Associate Professor at the Electrical Engineering Department of the Pennsylvania State University. Rongming Chu did his Ph.D. study at UC-Santa Barbara, working on GaN microwave transistors. After finishing his Ph.D. in 2008, he spent two years at Transphorm Inc., then a start-up company commercializing GaN power switching technology. From 2010 to 2018, he was with HRL Laboratories as a Research Staff Member and later as a Senior Research Staff, working on GaN power device technology development. Rongming has more than 30 issued US patents and over 70 publications in the field of GaN materials, devices and circuits. He is a senior member of IEEE and served on the technical program committees of the IEEE Workshop on Wide Bandgap Power Device and Applications, the IEEE Lester Eastman Conference, and the Asia-Pacific Workshop on Wide Bandgap Semiconductors. He is a recipient of the IEEE Electron Device Society's George E. Smith Award. Keisuke Shinohara is a principal scientist at Teledyne Scientific and Imaging in the USA. He received his Ph.D. degree in Solid State Physics from Osaka University, Japan in 1998. He has over 25 years of experience on material and transistor development based on III-V compound semiconductors such as InP-HEMTs, InP-HBTs, and GaN-HEMTs. His current research interests are the design, fabrication and characterization of novel III-N-based devices for RF and power electronics applications. He is currently a principal investigator of DARPA DREaM program, leading next generation high power-density, efficient, and linear GaN transistor development. Prior to joining Teledyne, he was with HRL Laboratories, and served as a principal investigator of DARPA NEXT and MPC programs. He has authored or coauthored more than 120 peer reviewed journals and international conference papers including 30 invited presentations, and 2 book chapters. He holds 21 patents in this technical field. He is a senior member of IEEE Electron Device Society and served on the technical committee of several international conferences including International Electron Device Meeting (IEDM), Device Research Conference (DRC), Microwave Theory and Techniques Society (MTT-S), International Conference on Indium Phosphide and Related Materials (IPRM), and (Lester Eastman Conference (LEC).