Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride

ISBN-13: 9783752884920 / Angielski / Miękka / 2018 / 166 str.

Patrick Hofmann

O autorze

Patrick Hofmann studied Applied Natural Science in Freiberg from 2008 to 2013 and finished his studies in the mid of 2013.Starting from June 2013 he worked as a scientist/ PhD-student at NaMLab gGmbH, where he cooperated with Freiberger Compound Materials GmbH, to investigate GaN single crystal growth via Hydride Vapour Phase Epitaxy with a deeper focus on doping.At the end of 2017 he handed in his dissertation and defended his results successfully. The publication of his work poses the end of his graduation.