High K Gate Dielectrics

ISBN-13: 9780367454449 / Angielski / Miękka / 2020 / 614 str.

Michel Houssa

Opis

The drive toward smaller and smaller electronic componentry of microelectronics is demanding new materials with higher electrical permittivity. An impressive collection of methods with in-depth coverage, High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Leading researchers from Europe and the USA de

Spis treści

Introduction
The need for high-k gate dielectrics and materials requirement
Deposition techniques
ALCVD, MOCVD, PLD, MBE
Characterization
Physico-chemical characterization
X-ray and electron spectroscopies
Oxygen diffusion and thermal stability
Defect characterization by ESR
Band alignment determined by photo-injection
Electrical characteristics
Theory of defects in high-k materials
Bonding constraints and defect formation at Si/high-k interfaces
Band alignment calculations
Electron mobility at the Si/high-k interface
Model for defect generation during electrical stress
Technological aspects
Device integration issues
Device concepts for sub-100 nm CMOS technologies
Transistor characteristics
Nonvolatile memories based on high-k ferroelectric layers

O autorze

Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium