High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (Mosfets)

ISBN-13: 9781771888431 / Angielski / Twarda / 2020 / 264 str.

Niladri Pratap Maity; Reshmi Maity; Srimanta Baishya

Opis

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).

Spis treści

1. Moore’s Law: In 21st Century Niladri Pratap Maity and Reshmi Maity 2. SiO2 Based MOS Devices: Leakage and Limitations Niladri Pratap Maity and Reshmi Maity 3. High-κ Dielectric Materials: Structural Properties and Selection P. Sri Harsha, K. Venkata Saravanan, and V. Madhurima 4. Selection of High-κ Dielectric Materials Niladri Pratap Maity and Reshmi Maity 5. Tunneling Current Density and Tunnel Resistivity: Application to High-κ Material HfO2 Niladri Pratap Maity and Reshmi Maity 6. Analysis of Interface Charge Density: Application to High-κ Material Tantalum Pentoxide Niladri Pratap Maity and Reshmi Maity 7. High-κ Material Processing in CMOS VLSI Technology Partha Pratim Sahu 8. Tunnel FET: Working, Structure, and Modeling S. Baishya 9. Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications D. P. Rai