Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition

ISBN-13: 9780367655808 / Angielski / Miękka / 2020 / 643 str.

John E. Ayers; Tedi Kujofsa; Paul Rago

Opis

This book serves as a comprehensive reference and graduate-level text on Semiconductor Heteroepitaxy —the crystal growth of semiconductor layers on dissimilar substrates for the purpose of making modern semiconductor devices including high-speed transistors, lasers and detectors, digital circuits, photovoltaic cells, solid-state lighting, and se

Recenzje

"Concise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies."
— Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary

Spis treści

Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

O autorze

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.