Handbook of Solid-State Lighting and LEDs

ISBN-13: 9781498741415 / Angielski / Twarda / 2017 / 704 str.

Zhe Chuan Feng

Opis

This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular gallium nitride (GaN)-based and related wide bandgap semiconductor light emitting diodes (LEDs) and other solid-state lighting (SSL) devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters cover fundamentals, LED technologies for lighting, and deep ultraviolet and other types such as organic LEDs, zinc oxide-based LEDs, and nanostructural LEDs.

Spis treści

OVERVIEW. From the dawn of GaN-based light-emitting devices to the present day. Spectrum-related quality of white-light sources. Nanofabrication of III-nitride emitters for solid-state lighting. III-nitride deep-ultraviolet materials and applications. GAN-BASED LEDS FOR LIGHTING. Efficiency droop of nitride-based light-emitting diodes. Design and fabrication of patterned sapphire substrates (PSS) for GaN-based light-emitting diodes. Surface Plasmon Coupled Light-Emitting Diodes. Deep level traps in GaN epilayer and LED. Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes. DEEP ULTRAVIOLET LEDS AND RELATED TECHNOLOGIES. Technological developments of UV-LEDs. Influence of carrier localization on efficiency droop and stimulated emission in AlGaN quantum wells. Solar-blind AlGaN devices. LASER DIODES. Laser diode-driven white light sources. InGaN laser diodes by plasma assisted molecular beam epitaxy. GaN-based blue and green laser diodes. NANO AND OTHER TYPES OF LEDS. Photonic Crystal Light-Emitting Diodes by Nanosphere Lithography. ZnO-based LEDs. Natural Light-Style Organic Light-Emitting Diodes. NOVEL TECHNOLOGIES AND DEVELOPMENTS. III-Nitride Semiconductor LEDs Grown on Si and Stress Control of GaN Epitaxial. A hole accelerator for III-nitride light-emitting diodes. MOCVD growth of GaN on foundry compatible 200 mm Si. Terahertz spectroscopy study of III-V nitrides. Internal luminescence mechanisms of III-nitride LEDs. Fabrication of thin film nitride-based light-emitting diodes.