Handbook of Solid-State Lighting and LEDs

ISBN-13: 9780367874582 / Angielski / Miękka / 2019 / 704 str.

Zhe Chuan Feng

Opis

This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular gallium nitride (GaN)-based and related wide bandgap semiconductor light emitting diodes (LEDs) and other solid-state lighting (SSL) devices. It reflects the vast growth of this field and impacts in diverse industries, f

Spis treści

OVERVIEW. From the dawn of GaN-based light-emitting devices to the present day. Spectrum-related quality of white-light sources. Nanofabrication of III-nitride emitters for solid-state lighting. III-nitride deep-ultraviolet materials and applications. GAN-BASED LEDS FOR LIGHTING. Efficiency droop of nitride-based light-emitting diodes. Design and fabrication of patterned sapphire substrates (PSS) for GaN-based light-emitting diodes. Surface Plasmon Coupled Light-Emitting Diodes. Deep level traps in GaN epilayer and LED. Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes. DEEP ULTRAVIOLET LEDS AND RELATED TECHNOLOGIES. Technological developments of UV-LEDs. Influence of carrier localization on efficiency droop and stimulated emission in AlGaN quantum wells. Solar-blind AlGaN devices. LASER DIODES. Laser diode-driven white light sources. InGaN laser diodes by plasma assisted molecular beam epitaxy. GaN-based blue and green laser diodes. NANO AND OTHER TYPES OF LEDS. Photonic Crystal Light-Emitting Diodes by Nanosphere Lithography. ZnO-based LEDs. Natural Light-Style Organic Light-Emitting Diodes. NOVEL TECHNOLOGIES AND DEVELOPMENTS. III-Nitride Semiconductor LEDs Grown on Si and Stress Control of GaN Epitaxial. A hole accelerator for III-nitride light-emitting diodes. MOCVD growth of GaN on foundry compatible 200 mm Si. Terahertz spectroscopy study of III-V nitrides. Internal luminescence mechanisms of III-nitride LEDs. Fabrication of thin film nitride-based light-emitting diodes.

O autorze

Prof. Zhe Chuan Feng earned his Ph.D. in condensed matter physics from the University of Pittsburgh in 1987. Previously he received his B.S. (1962-68) and M.S. degrees (1978-81) from the Department of Physics at Peking University. He has had positions at Emory University (1988-1992), National University of Singapore (1992-1994), Georgia Tech (1995), EMCORE Corporation (1995-1997), Institute of Materials Research & Engineering, Singapore (1998-2001), Axcel Photonics (2001-2002) and Georgia Tech (2002-2003). In 2003, Prof. Feng joined National Taiwan University as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, focusing on materials research and MOCVD growth of LED, III-Nitrides, SiC, ZnO and other semiconductors/oxides. He is currently distinguished professor at the Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics in the School of Physical Science and Technology at Guangxi University, Nanning, China.

Prof. Feng has edited nine review books on compound semiconductors and microstructures, porous Si, SiC and III-Nitrides, ZnO, devices and nanoengineering, and has authored or co-authored over 570 scientific papers with over 220 indexed by the Science Citation Index (SCI) and cited over 2,540 times. He has been symposium organizer and invited speaker at different international conferences and universities, and has been a reviewer for several international journals including Physics Review Letters, Physics Review B and Applied Physics Letters. He has served as guest editor for special journal issues, and has been a visiting or guest professor at Sichuan University, Nanjing Tech University, South China Normal University, Huazhong University of Science & Technology, Nankai University and Tianjin Normal University. He is a member of the international organizing committee for the Asian-Pacific Confe