Handbook of Magnetic Random Access Memory

ISBN-13: 9781498754699 / Angielski / Twarda / 2025 / 304 str.

Weisheng Zhao; Wang Kang

Spis treści

1.2 Challenges of conventional memory technologies 1.3 Non-volatile memory technologies 1.4 State of the art (roadmap)2. Spintronics fundamentals 2.1 General principles 2.2 Giant MagnetoResistance (GMR) and Magnetic Tunnel MagnetoResistance (TMR) 2.3 Perpendicular Magnetic Anisotropy 2.4 Spin Transfer Torque (STT) and Spin Hall Effect (SHE) 2.5 Emerging spin related phenomena for MRAM3. MRAM 3.1 Field-MRAM 3.2 STT-MRAM 3.3 SHE-MRAM 3.4 Racetrack Memory 3.5 Advanced MRAM concepts4. Device Fabrication 4.1 Introduction of processing tools 4.2 Ultra-thin film deposition 4.3 Nanopillar processing 4.4 Back-end integration with CMOS technology 4.5 Device fabrication status and challenges5. Circuit and architecture designs 5.1 Device modeling and EDA tools for hybrid simulation 5.2 Cell structure and array organization 5.3 Cell Read/write techniques and Error Correction Code 5.4 Memory Chip architecture design 5.5 Circuit and architecture design status and challenges6 Performance evaluation for potential applications