Handbook for III-V High Electron Mobility Transistor Technologies

ISBN-13: 9781138625273 / Angielski / Twarda / 2019 / 430 str.

D. Nirmal; J. Ajayan

Opis

The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.

Spis treści

1. Motivation Behind High Electron Mobility Transistors 2. Introduction to High Electron Mobility Transistors 3. HEMT Material Technology and Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6. AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9. Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave Applications 15. Metal Oxide Semiconductor High Electron Mobility Transistors 16. Double Gate High Electron Mobility Transistors