Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

ISBN-13: 9783639030280 / Angielski / Miękka / 2008 / 124 str.

Yuriy Danylyuk

Opis

The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si, Sapphire, SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology, the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Eg of InxAl1-xN in the temperature range 70-700K and compositional range (0

O autorze

Danylyuk Yuriy Assistant Professor (research) of Electrical and Computer Engineering (SSIM) at Wayne State University. He obtained his Ph.D. from the WSU in Detroit,USA. He is the author and co-author of over 60 scientific papers. His research interest link between science and technology of Wide and Narrow band-gap semiconductors and devices on their base.