Gallium Nitride Power Devices

ISBN-13: 9789814774093 / Angielski / Twarda / 2017 / 298 str.

Hongyu Yu; Tianli Duan

Opis

This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.

Spis treści

The Growth Technology of High-Voltage GaN on Silicon. The Characteristics of Polarization Effects in GaN Heterostructures. The GaN Transistor Fabrication Process. Conventional AlGaN/GaN Heterojunction Field-Effect Transistors. Original Demonstration of Depletion Mode and Enhancement Mode AlGaN/GaN Heterojunction Field-Effect Transistors. Surface Passivation and GaN MIS HEMTs. GaN Vertical Power Devices. Reliability of GaN HEMT Devices. Packaging Technologies for GaN HEMTs.

O autorze

Hongyu Yu and Tianli Duan are bkoth with the Southern University of Science and Technology of China, Shenzhen