Fundamentals of Solid State Engineering

ISBN-13: 9780387921679 / Angielski / Twarda / 2009 / 764 str.

Manijeh Razeghi

Opis

Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication

Covers wide range of topics in the same style and in the same notation

Most up to date developments in semiconductor physics and nano-engineering

Mathematical derivations are carried through in detail with emphasis on clarity

Timely application areas such as biophotonics, bioelectronics

Recenzje

From the reviews of the third edition: "The subject area of solid state engineering is potentially very complex ... . Manijeh Razeghi takes a multi-disciplinary approach to the text to address the requirements for engineers and scientists ... . He commendably uses illustrations and worked examples for the benefit of comprehension; this is an excellent and well-rounded book." (Times Higher Education, December, 2009)

Spis treści

Crystalline Properties of Solids.- Introduction.- Crystal lattices and the seven crystal systems .- The unit cell concept.- Bravais lattices .- Point groups.- Space groups.- Directions and planes in crystals: Miller indices.- Real crystal structures.- Summary.- Further reading.- Problems.- The Reciprocal Lattice.- Introduction.- Diffraction by a crystal.- Structure factor.- Atomic form factor.- First Brillouin zone.- Summary.- References.- Further reading.- Problems.- Electronic Structure of Atoms.- Introduction.- Spectroscopic emission lines and atomic structure of hydrogen.- Atomic orbitals.- Structures of atoms with many electrons.- Bonds in solids.- Introduction to energy bands.- Summary.- Further reading.- Problems.- Introduction to Quantum Mechanics.- The quantum concepts.- Elements of quantum mechanics.- Simple quantum mechanical systems.- Summary.- Further reading.- Problems.- Electrons and Energy Band Structures in Crystals.- Introduction.- Electrons in a crystal.- Band structures in real semiconductors.- Band structures in metals.- Summary.- References.- Further reading.- Problems.- Phonons.- Introduction.- Interaction of atoms in crystals: origin and formalism.- One-dimensional monoatomic harmonic crystal.- Sound velocity.- One-dimensional diatomic harmonic crystal.- Phonons.- Summary.- Further reading.- Problems.- Thermal Properties of Crystals.- Introduction.- Phonon density of states (Debye model).- Heat capacity.- Thermal expansion.- Summary.- References.- Further reading.- Problems.- Equilibrium Charge Carrier Statistics in Semiconductors.- Introduction.- Density of states.- Effective density of states (conduction band).- Effective density of states (valence band).- Mass action law.- Doping: intrinsic vs. extrinsic semiconductor.- Charge neutrality.- Fermi energy as a function of temperature.- Carrier concentration in a semiconductor.- Summary.- Further reading.- Problems.- Non-Equilibrium Electrical Properties of Semiconductors.- Introduction.- Electrical conductivity.- Doping.- Charge carrier diffusion.- Carrier generation and recombination mechanisms.- Summary.- Further reading.- Problems.- Semiconductor Junctions.- Introduction.- Ideal p-n junction at equilibrium.- Non-equilibrium properties of p-n junctions.- Deviations from the ideal p-n diode case.- Metal-semiconductor junctions.- Summary.- Further reading.- Problems.- Optical Properties of Semiconductors.- Introduction.- Electron-photon interaction.- The dielectric permitivity of a solid.- Excitons.- Phonon-photon interaction.- Plasmons.- Electro-optical properties.- Electrons in a magnetic field.- Nonlinear optical properties.- Optical properties of important semiconductors.- Summary.- References.- Further reading.- Problems.- Low Dimensional Quantum Structures.- Introduction.- two-dimensional structures: quantum wells.- One-dimensional structures: quantum wires.- Zero-dimensional structures: quantum dots.- Examples of low dimensional structures.- Optical properties of 3D, 2D, 1D and 0D structures.- Summary.- References.- Further reading.- Problems.- Semiconductor Heterostructures.- Introduction.- Energy band offsets.- Type I alignment.- Type II alignments.- Summary.- References.- Further reading.- Problems.- Compound Semiconductors and Crystal Growth Techniques.- Introduction.- III-V semiconductor alloys.- Bulk single crystal growth techniques.- Epitaxial growth techniques.- Summary.- References.- Further reading.- Problems.- Silicon and Compound Semiconductor Device Technology.- Introduction.- Oxidation in Silicon.- Diffusion of dopants.- Ion implantation of dopants.- Characterization of diffused and implanted layers.- Summary.- References.- Further reading.- Problems.- Semiconductor Chara

O autorze

Manijeh Razeghi is a Walter P. Murphy Professor of Electrical and Computer Engineering and Director of the Center for Quantum Devices at Northwestern University. She joined the ECE department in 1991. Prior to that, she was the Head of the Exploratory Materials Lab, Thomson-CSF, Orsay, France, from 1986-1991. She has authored 1000 papers, given more than 500 invited and plenary talks, written 12 book chapters, 8 books, and holds 50 patents. Dr. Razeghi is a Fellow of the International Engineering Consortium, a Life Member and Fellow of the Society of Women Engineers, and a Fellow of the Society of Photo-Optical Instrumentation Engineering, the Optical Society of America (OSA), and of the IEEE. She won the IBM Europe Science and Technology Prize, an Achievement Award from the Society of Women Engineers, and many Best Paper Awards. Manijeh Razeghi received her DEA in 1976, the Docteur 3eme Cycle in Solid State Physics in 1977, and the Docteur d'Etat des Sciences Physiques in 1980, all from the Universite de Paris Sud (11), France.
Manijeh Razeghi is one of the leading researchers in the field of optoelectronics. Her areas of expertise are in the growth and characterization techniques for III-V and II-VI semiconductor heterojunction multiple quantum well devices and superlattices for photonic and electronic devices. She was responsible for the design and implementation of epitaxial growth techniques such as metalorganic chemical vapor deposition (MOCVD), VPE, MBE and metalorganic molecular beam epitaxy (MOMBE) as well as optical, electrical, and structural characterization of the semiconductor multilayers. She has developed a number of semiconductors, advanced photonic and electronic devices such as lasers, photodetectors, transistors and which are in turn used in fiber optics communication.

Blurb

Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering.

Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach.

Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers.