Extraction of Semiconductor Diode Parameters: A Comparative Review of Methods and Materials

ISBN-13: 9783031488467 / Angielski

Richard Ocaya

Spis treści

Determining p-n Junction Band Gap.- Review of Metal-Semiconductor Junctions.- Contemporary Parameter Extraction Methods.- Transient Methods.- New Parameter Extraction Techniques.- p-n Diode Parameter Extraction.- Novel Unified Method.- Artifical Intelligence Parameter Extraction Methods.

O autorze

Dr. Richard O. Ocaya is a physics professor with extensive experience in mathematical methods, device characterization, materials science, and microcontroller-based instrument design. His particular area of expertise lies in the application of nonlinear methods to simplify the extraction of semiconductor device parameters, which is essential for the development of new technologies. He has also conducted extensive research in the design of innovative instruments based on microcontrollers, which have proven to be invaluable tools in the field of physics.

Dr. Ocaya's work has earned him numerous accolades, including awards from various scientific societies. He is a passionate educator who enjoys sharing his knowledge with students and colleagues alike, having mentored many successful researchers in the field of physics. Beyond his research and teaching duties, Dr. Ocaya is actively involved in the scientific community, serving on several editorial boards and participating in various professional organizations.

Blurb

This book presents a comprehensive treatise on the extraction of semiconductor diode parameters using various methods. Its focus is on metal-semiconductor, metal-insulator-semiconductor, and p-n junction diodes, covering a wide range of metals and semiconductors, including elemental, compound, organic, and nanostructured materials. By bringing together these methods in one place, this book provides a much-needed standardized point of reference for the field.

The methods used for device characterization have spread widely but not yet critically compared and contrasted. This book aims to bridge this gap by offering a comparative review of the methods and providing the most accurate information on current developments. The result is a valuable resource for researchers and practitioners who seek to optimize their use of semiconductor diodes in their work.

With its thorough coverage and critical analysis, this book fills a large void in the field of semiconductor device characterization. It is an essential reference for anyone interested in the extraction of semiconductor diode parameters using a variety of methods.