Electronic Properties of GaN and AlN Surfaces and Interfaces

ISBN-13: 9783639156317 / Angielski / Miękka / 2009 / 168 str.

Chih-I Wu

Opis

This book describes the electronic properties of the surfaces of gallium nitride (GaN) and aluminum nitride (AlN), which are the materials with applications in short wavelength light emitting devices and high power electronics. First, we report the studies of the surface structure, stoichiometry and electronic properties of GaN(0001) and AlN (0001) surfaces. Clean and ordered (1x1) surfaces with nearly stoichiometric composition were prepared and then investigated using direct and inverse photoemission spectroscopy. Filled and empty surface states were found to exist and extend beyond the valence and conduction band edges at GaN and AlN surfaces. These intrinsic surface states are presumably associated with cation dangling bonds.We then present the studies of negative electron affinity at AlN and GaN surfaces. The effects of cesium (Cs) adsorption on electron affinity at the AlN(0001)-1x1 and GaN(0001)-1x1 surfaces were investigated via ultra-violet and x-ray photoemission spectroscopy and total yield spectroscopy. We also discuss the chemical and electrical properties of metal-GaN interfaces.

O autorze

Chih-I Wu joined the faculty of Graduate Institute of Electro-
Optical Engineering and the Department of Electrical Engineering
of National Taiwan University in 2004. Prior to joining NTU, he
worked at Intel Corporation in the US from 2000 to 2004. Dr. Wu
got a Ph.D. degree from Department of Electrical Engineering at
Princeton University.