Electromigration and Electronic Device Degradation

ISBN-13: 9780471584896 / Angielski / Twarda / 1994 / 343 str.

Aris Christou; Aristos Christou; Aris Christou

Opis

This study reviews an important reliability issue for both silicon and GaAs technologies. It surveys the status of electromigration physics in microelectronics, and summarizes various rate controlling details.

Spis treści

Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (A. Christou).

Simulation and Computer Models for Electromigration (P. Tang).

Temperature Dependencies on Electromigration (M. Pecht & P. Lall).

Electromigration and Related Failure Mechanisms in VLSI Metallizations (A. Christou & M. Peckerar).

Metallic Electromigration Phenomena (S. Krumbein).

Theoretical and Experimental Study of Electromigration (J. Zhao).

GaAs on Silicon Performance and Reliability (P. Panayotatos, et al.).

Electromigration and Stability of Multilayer Metal–Semiconductor Systems on GaAs (A. Christou).

Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (A. Christou).

Reliable Metallization for VLSI (M. Peckerar).

Index.