Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

ISBN-13: 9789811334436 / Angielski / Twarda / 2018 / 102 str.

Mengqi Fu

Spis treści

Introduction.- Preparation, characterization and parameter extraction of InAs nanowire-based devices.- Size effect on the electrical properties of InAs nanowires.- Crystal phase- and orientation-dependent electrical properties of InAs nanowires.- Influence of growth methods on the electrical properties of InAs nanowires.- Summary.

O autorze

Dr. Mengqi Fu received her Ph.D. degree from the School of Electronics Engineering and Computer Science, Peking University, China in 2016. Currently, she is a researcher at Shanghai Academy of Spaceflight Technology where she focuses on the device physics of InAs nanowires as well as the experimental exploration of novel device structures for high-performance nanoelectronic devices.

Dr. Fu’s dissertation was awarded “Excellent Doctoral Dissertation of Peking University” in 2016. She also won the Outstanding Graduates of Beijing at Peking University award. During her Ph.D. studies, Dr. Fu published 15 peer-reviewed articles in international journals, including Nano Lett., Appl. Phys. Lett. and Nanotechnology, 3 of which as first author.

Blurb

This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. 

The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.