Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors

ISBN-13: 9780471171348 / Angielski / Twarda / 1998 / 544 str.

H. Craig Casey

Opis

A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used to illustrate important concepts. The book uses spice tools to analyze complex devices. Design specifications are stressed in building or modeling complicated semiconductor devices.

Spis treści

Integrated Circuit Family Tree

Electrons in Solids

Carrier Transport and Recombination

p–n Junctions: I–V Behavior

p–n Junctions: Reverse Breakdown and Junction Capacitance

Schottky–Barrier Devices

MOS Capacitors

MOS Field–Effect Transistors

Bipolar Transistors

Appendix I: Introduction to PSPICE

Blurb

A detailed introduction of the Si and III–V compound semiconductors As you read through this text, you’ll gain a thorough understanding of the device physics of the Si and III–V compound semiconductors used in integrated circuits. The device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field–effect transistors (MOSFETs) are also developed. And the physical understanding of the material is emphasized throughout, with important equations being derived from basic physical concepts. Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Carrier transport and recombination processes are explained in detail and are applied to the description of the pn junction. And the physics of the semiconductor devices are related to the parameters used in Spice, which are illustrated using PSpice examples and problems. Unique features of the text:

• The physics of semiconductor devices is related to the parameters used in Spice, and detailed instructions are included on PSpice.
• Circuit applications are given to illustrate the use of the devices and to provide a foundation for subsequent topics in electronic circuits.
• Includes coverage of topics such as the inversion layer thickness, drain current flow in field–effect transistors after pinch off, and the subthreshold current in MOSFETs.
• Figures and examples based on realistic device parameters are used to illustrate important concepts.