Defects in Microelectronic Materials and Devices

ISBN-13: 9780367386399 / Angielski / Miękka / 2019 / 770 str.

Daniel M. Fleetwood; Ronald D. Schrimpf

Opis

Focusing primarily on silicon-based microelectronics, Defects in Microelectronic Materials and Devices provides a comprehensive overview of recent progress made in understanding the effects of electrically active defects in microelectronic materials. The book places particular emphasis on defects that limit device quality, reliability, manufacturability, and radiation response. Notable theorists and researchers present their perspectives on defects in insulators and in semiconductors as well as hydrogen and defect-related failure mechanisms. The text also discusses compound semiconductor materials for microelectronic applications and examines new information garnered from physics and engineering models.

Spis treści

Defects in Ultra-Shallow Junctions. Hydrogen-Related Defects in Silicon, Germanium, and Silicon–Germanium Alloys. Defects in Strained-Si MOSFETs. The Effect of Defects on Electron Transport in Nanometer-Scale Electronic Devices: Impurities and Interface Roughness. Electrical Characterization of Defects in Gate Dielectrics. Dominating Defects in the MOS System: Pb and E0 Centers. Oxide Traps, Border Traps, and Interface Traps in SiO2. From 3D Imaging of Atoms to Macroscopic Device Properties. Defect Energy Levels in HfO2 and Related High-K Gate Oxides. Spectroscopic Studies of Electrically Active Defects in High-k Gate Dielectrics. Defects in CMOS Gate Dielectrics. Negative Bias Temperature Instabilities in High-k Gate Dielectrics. Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen. Toward Engineering Modeling of Negative Bias Temperature Instability. Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides. Defects Associated with Dielectric Breakdown in SiO2-Based Gate Dielectrics. Defects in Thin and Ultrathin Silicon Dioxides. Structural Defects in SiO2–Si Caused by Ion Bombardment. Impact of Radiation-Induced Defects on Bipolar Device Operation. Silicon Dioxide–Silicon Carbide Interfaces: Current Status and Recent Advances. Defects in SiC. Defects in Gallium Arsenide. Appendix: Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices.

O autorze

Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf