Deep Centers in Semiconductors

ISBN-13: 9782881245626 / Angielski / Twarda / 1992 / 944 str.

Raymond Bonnett

Opis

Offering a comprehensive view of research in semiconductor deep centres, this volume examines several key deep centres, all chosen to illustrate a variety of essential concepts. For each deep centre chosen a scientist instrumental in its development discusses the many experimental and theoretical techniques used to achieve the current understanding of that centre. This second edition contains five new sections treating recent developments in the field, including a new chapter on hydrogen in crystalline semiconductors.

Spis treści

Perspectives in the Past Present and Future, Chalcogen Impurities in Silicon, The Lattice Vacancy in Silicon, Oxygen and Oxygen Associates in Gallium, The Two Dominant Recombination Centers, The MidGap Donor Level EL2 in Gallium, DX Centers in IIIV Alloys, Iron Impurity Centers in IIIV Semiconductors, Chromium in Gallium Arsenide, The Optoelectronic Properties of Copper, Hydrogen in Crystalline Semiconductors

O autorze

Sokrates T. Pantelides (Author)