ISBN-13: 9780471971443 / Angielski / Twarda / 1998 / 256 str.
This text presents the theoretical basis of PV in crystalline silicon in terms of semiconductor physics, device analysis and measurement. Coverage includes a short history of PV, (including reasons as to why the broad application been applied before), solar radiation and semiconductor physics, including PN junctions (boundary between p- and n- type semiconductors, having marked rectifying characteristics; used in diodes, photocells). Special emphasis is given to the physical and technological requirements to achieve high efficiency. Additionally, other types of solar cells are discussed (amorphous silicon, CuInSe) and characterization methods to determine physical and PV parameters are covered. Other parts of PV systems and PV applications are also covered.