Compact Modeling: Principles, Techniques and Applications

ISBN-13: 9789400793248 / Angielski / Miękka / 2014 / 527 str.

Gennady Gildenblat

Opis

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Recenzje

From the reviews:

"This excellent reference covers a niche in the recent development of compact modeling for integrated circuit systems. The book can serve as a guide to current research based on the down-scaling of semiconductor devices, particularly for device physicists, electrical engineers and applied mathematicians. The reader will benefit in particular from the coverage of statistical modeling, which treats stochastic system variability and other random effects ... . Each chapter is well documented with references, and the underlying theory for each device class is well demonstrated." (Axel Mainzer Koenig, Optics & Photonics News, May, 2011)

Spis treści

Preface. Part I. Compact Models of MOS Transistors. 1. Surface-Ppotential-Based Compact Model of Bulk MOSFET. 2. PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs. 3. Benchmark Tests for MOSFET Compact Models . 4. High-Voltage MOSFET Modeling. 5. Physics of Noise Performance of Nanoscale Bulk MOS Transistors. Part II Compact Models of Bipolar Junction Transistors. 6. Introduction to Bipolar Transistor Modeling. 7. Mextram. 8. The HiCuM Bipolar Transistor Model. Part III. Compact Models of Passive Devices. 9. Integrated Resistor Modeling. 10. The JUNCAP2 Model for Junction Diodes. 11. Surface-Potential-Based MOS Varactor Model. 12. Modeling of On-chip RF Passive Components. Part IV. Modeling of Multiple Gate MOSFETs. 13. Multi-Gate MOSFET Compact Model BSIM-MG. 14. Compact Modeling of Double-Gate and Nanowire MOSFETs. Part V. Statistical Modeling. 15. Modeling of MOS Matching. 16. Statistical Modeling Using Backward Propagation of Variance (BPV). Index.

Blurb

Compact Models of circuit elements are models that are sufficiently simple to be incorporated in circuit simulators and are sufficiently accurate to make the outcome of the simulators useful to circuit designers. The conflicting objectives of model simplicity and accuracy make the compact modeling field an exciting and challenging research area for device physicists, modeling engineers and circuit designers.

The models of MOS transistors underwent revolutionary change in the last few years and are now based on new principles. The recent models of diodes, passive elements, noise sources and bipolar transistors were developed along the more traditional lines. Following this evolutionary development they became highly sophisticated and much more capable to reflect the increased demands of the advanced integrated circuit technology. The latter depends on the compact models for the shortening of the design cycle and eliminating the elements of overdesign which is often undesirable in today’s competitive environment. At the same time, statistical modeling of semiconductor devices received new significance following the dramatic reduction of the device dimensions and of the power supply voltage. Finally, despite the complexity of the fabrication process, the multi-gate MOS transistors are now seriously considered for the purpose of controlling the small geometry effects.

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Compact Modeling also includes chapters on the MOSFET noise theory, benchmarking of MOSFET compact models, modeling of the power MOSFET, and an overview of the bipolar modeling field. It concludes with two chapters describing the variability modeling including some recent developments in the field.