CMOS Test and Evaluation: A Physical Perspective

ISBN-13: 9781493913480 / Angielski / Twarda / 2014 / 424 str.

Manjul Bhushan; Mark B. Ketchen

Opis

CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.

Spis treści

Introduction.- CMOS Circuit Basics.- CMOS Storage Elements and Synchronous Logic.- IDDQ and Power.- Embedded PVT Monitors.- Variability.- Product Chip Test and Characterization.- Reliability, Burn-In and Guardbands.- Data Analysis and Characterization.- CMOS Metrics and Model Evaluation.

O autorze

Manjul Bhushan is a technical consultant in New York.

Mark Ketchen is a technical consultant in Massachusetts.

Blurb

This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.