Atomic Layer Deposition for Semiconductors

ISBN-13: 9781489979438 / Angielski / Miękka / 2016 / 263 str.

Cheol Seong Hwang

Opis

This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

Spis treści

I.Introduction Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung) II.Fundamentals Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard) Chapter 3 . ALD simulations; Simon Elliott (Tyndall) III.ALD for memory devices Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU) III-2. ALD for emerging memories Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM) Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon) IV.ALD for logic devices Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University) V.ALD machines Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu

O autorze

 Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.

Blurb

Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.