1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)
2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond
3. Electrochemical techniques and their applications for CMP of metal films
4. Ultra-low-k materials and chemical mechanical planarization (CMP)
5. CMP processing of high mobility channel materials - alternatives to Sis
6. Multiscale modeling of chemical mechanical planarization (CMP)
7. Polishing of SiC films
8. Chemical and physical mechanisms of CMP of gallium nitride
9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes
10. Transient copper removal rate phenomena with implications for polishing mechanisms
11. Environmental aspects of planarization processes
Part Two - Consumables and process control for improved CMP
12. Preparation and characterization of slurry for CMP
13. Chemical metrology methods for CMP quality
14. Diamond disc pad conditioning in chemical mechanical polishing
15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy
16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters
17. Approaches to defect characterization, mitigation and reduction
18. Challenges and solutions for post-CMP cleaning at device and interconnect levels
19. Applications of chemical mechanical planarization (CMP) to More than Moore devices
20. CMP for phase change materials
21. CMP pads and their performance
22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning
Suryadevara Babu is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, NY, USA. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.