Advanced Indium Arsenide-Based Hemt Architectures for Terahertz Applications

ISBN-13: 9780367554149 / Angielski / Twarda / 2021 / 130 str.

Mohankumar N

Opis

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

Spis treści

Chapter 1: Introduction to III-V materials and HEMT StructureSanhita Manna Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown ApplicationsD.Godwinraj Chapter 3: III-V Hetero Structure Devices for High Frequency ApplicationsR. Saravana Kumar Chapter 4: Overview of THz ApplicationsT. Nagarjuna Chapter 5: Device and Simulation Framework of InAs HEMTsV. Mahesh Chapter 6: Single Gate (SG)InAs Based HEMTs Architecture for THz ApplicationsM. Arun Kumar Chapter 7: Effect of Gate Scaling and Composite Channel in InAsHEMTC. Kamalanathan Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz ApplicationsR. Poorna Chandran Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTsY. Vamshidhar Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMTGirish Shankar Mishra