III-Nitride Semiconductors: Growth

ISBN-13: 9781560329954 / Angielski / Twarda / 2002 / 832 str.

Omar Manasreh;Manasreh Omar; M. Omar Manasreh

Opis

This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers.
The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.

Spis treści

Chapter One: Reduction of Dislocation Density in GaN Films Formed by Epitaxial Lateral Overgrowth
Chapter Two: Lateral and Pendo-Epitaxial Growth and Characterization of Thin Films of GaN and AIGaN Alloys on SIC(0001) and Si(111) Substrates
Chapter Three: Spatially Resolved Optical Characterization of GaN Structures Produced by Selective Area Epitaxy and Epitaxial Lateral Overgrowth
Chapter Four: Selective Area Growth of Gallium Nitride on ?-AI2O3 and Silicon Substrates Using Oxidized Aluminum Arsenide
Chapter Five: Homo and Hetero-Epitaxial MOVPE Growth of GaN
Chapter Six: Hydride Vapour Phase Epitaxial Growth of Thick GaN Layers
Chapter Seven: Growth Modes and Strain Relaxation Mechanisms of Nitrides in Molecular Beam Epitaxy: From 2D to 3D Growth Mode
Chapter Eight: Molecular Beam Epitaxy of Group-III Nitrides
Chapter Nine: "Growth and Characterization of MBE-grown Cubic GaN, InxGa1-xN and AIyGa1-yN"
Chapter Ten: Growth of III_V Nitrides by Pulsed Laser Deposition
Chapter Eleven: Influence of the Growth Mode on the physical Properties of GaN Grown by MetalOrganic Vapor Phase Epitaxy
Chapter Twelve: Epitaxial Growth and Characterization of GaN-based Nitrides and Related Devices on Silicon Substrates
Chapter 13: Metalorganic Vapor Phase Change Epitaxy Grown Hexagonal GaN and AIGaN for UV-Visible-Blind Photodetector Device Applications
Chapter 14: Epitaxial Growth of Wurtzite GaN and Ternary Compounds

O autorze

Omar Manasreh is the Series Editor of Optoelectronic Properties of Semiconductors and Superlattices. He is a Professor of Electrical and Computer Engineering at the University of New Mexico. He has extensive experience in the experimental and theoretical optoelectronic properties of III-V semiconductors, superlattices and related devices. In particular, his recent work is focused on optoelectronic devices such as near, mid-, and long-wavelength infrared detectors, as well as UV detectors based on III-nitrides for optical communications.
Dr. Ian Ferguson joined Georgia tech from Emcore Corporation where he served as a Director of Research. Prior to this, he worked with interdisciplinary research groups at Northwestern University in Evanston, IL and at the Imperial College in London, UK. Dr. Ferguson has a particular interest in research that involves an interdisciplinary approach that is often conducted in collaboration with industry partners. He has also been actively involved in the entrepreneurial process of establishing new companies. He is currently a Professor in the Microelectronics Group of the Georgia Tech ECE Department.