Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures

ISBN-13: 9780521819343 / Angielski / Twarda / 2007 / 644 str.

Technology and Medi D. B. Holt (Imperial College of Science;B. G. Yacobi (University of Toronto)

Opis

Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Recenzje

'This new book is … a welcome addition, covering as it does extended defects in semiconductors from the basics to the current state-of-the-art. … extremely readable with a clear, concise style. The presentation is classic, eschewing 'break-out boxes' and other more modern layout innovations in favour of a traditional straight text. The diagrams are equally no nonsense: simple clear line drawings, which as a result effectively convey what are sometimes complex concepts. Lots to crib from here for lecture presentations! … In their quest to create a single book covering such a large subject area the authors have been surprisingly successful, and the result is an interesting, readable book that serves both as an excellent introduction for postgraduates and a useful reference for those in the field. … it will no doubt become a regularly consulted reference work in every materials science library.' Chemistry World

Spis treści

1. Semiconducting materials; 2. An introduction to extended defects; 3. Characterization of extended defects in semiconductors; 4. Core structures and mechanical effects of extended defects specific to semiconductors; 5. The electrical, optical and device effects of dislocations and grain boundaries; 6. Point defect materials problems.