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This book is focused on the spintronic properties of III V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin...