Studies on Schottky Electrodes to n-type Indium Phosphide : Electronic Device Applications

ISBN-13: 9786200082381 / Angielski

Bhaskar Reddy Matli; Janardhanam Vallivedu; Rajagopal Reddy Varra

Opis

Metal-Semiconductor contacts play an important role in the fabrication of devices based on the III-V group compound semiconductors in the form of Schottky electrodes. Schottky barrier contacts based on n-InP are of considerable interest on account of their potential applications in solar cells, microwave field effect transistors, and high speed devices etc. The choice of InP as a substrate for these devices stems from the fact that it has an optimum band gap for photo-voltaic energy conversion and a large mobility required for high speed devices. This Book describes the device fabrication and characterization of Pd/Au, Pt/Au and Ni/Au Schottky contacts to n-type InP. It discusses current-voltage, capacitance-voltage, XRD and AFM studies that are carried out in the present work. It presents the influence of rapid thermal annealing on the electrical and structural properties of Pd/Au, Pt/Au and Ni/Au to n-InP (111). The results presented in the book will be useful for those working in the field of fabrication of Schottky contacts on n-type InP

O autorze

Matli, Bhaskar Reddy
Prof. M. Bhaskar Reddy, Department of Physics, Government Degree & PG College, Nagari, A.P., has published more than 10 Research papers and completed two UGC Minor Research Projects. He has also been serving as IQAC coordinator of the institution. He was conferred with State Best Teacher Award 2013 by the Government Andhra Pradesh, India.