Exploration of the Potential Defects in GaN HEMTs : with Hyperspectrum Image Techniques

ISBN-13: 9783639114157 / Angielski / Miękka / 2009 / 148 str.

Hsiang Chen

Opis

What happens inside a GaN HEMT during device operations? Usually,destructive measurements are required to analyze the defect and the carriertrapping - which are the two biggest reliabilty issues in GaN electronics.The novel noninvasive optical characterization techniques provided by this book can visualize the potential defect and the trapping region inside an operating GaN HEMT. The techniques show promise for screening the device failure.

O autorze

Hsiang Chen received the PhD degree in electrical engineering at
University of California, Irvine. He is a faculty member in the
electrical engineering department and the applied materials and
optoelectronic engineering department at National Chi Nan
University, Taiwan (R.O.C.).