V rabote resheny zadachi, svyazannye s polucheniem slozhnolegirovannykh kristallov tvyerdykh rastvorov Ge-Si c zadannym raspredeleniem osnovnykh komponentov i primesey, a takzhe s izucheniem spektra primesnykh sostoyaniy i elektrotransportnykh yavleniy v etikh materialakh. V pfannovskom priblizhenii i v ramkakh modeli virtual'nogo kristalla dlya tvyerdykh rastvorov resheny matematicheskie zadachi raspredeleniya komponentov i primesey v kristallakh binarnykh sistem, vyrashchennykh traditsionnym i modernizirovannym metodami Bridzhmena. Razrabotana metodika vyrashchivaniya kristallov Ge-Si c...
V rabote resheny zadachi, svyazannye s polucheniem slozhnolegirovannykh kristallov tvyerdykh rastvorov Ge-Si c zadannym raspredeleniem osnovnykh kompo...